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PTAS (liquid) PTAS溶液

參   考   價(jià): 6041.75

訂  貨  量: ≥1 瓶

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品       牌2D Semiconductors

廠商性質(zhì)生產(chǎn)商

所  在  地泰州市

更新時(shí)間:2024-06-03 20:05:42瀏覽次數(shù):1260次

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The only commercially available PTAS organic salt. This is the type of nucleation promoter actively used by our R&D team to product variety of large area 1cm2 to wafer scale CVD products.

The only commercially available PTAS organic salt. This is the type of nucleation promoter actively used by our R&D team to product variety of large area 1cm2 to wafer scale CVD products. Examples include CVD MoS2, MoSe2, WS2, WSe2, ReS2, ReSe2, PtS2, PtSe2, SnS2, and SnSe2. Our CVD products require ~10mM (for Mo, W based TMDCs) to ~1mM concentration of PTAS for (Pt, Re, and Sn based TMDCs). The solution is intentionally packaged in 2mL bottle in liquid form at 2mM concentration to make ~200mL to 2L of solution. Thus, 2 mL bottle should be diluted to 200mL (using DI water) to grow CVD MoS2, MoSe2, WS2, and WSe2 monolayers.

To date our PTAS materials have enabled many researchers to synthesize 2D CVD materials. Ideal for Vapor transport growth for monolayer metal sulfides (MoS2, WS2, NiS2, TiS2, and etc.). Perylene-3,4,9,10-tetracarboxylic acid tetrapotassium acid salt (PTAS) acts as a seed for monolayer metal sulfides by catalyzing reduced metal oxides onto various substrates. This polymer has been synthesized at our facilities from perylene-3,4,9,10-tetracarboxylic dianhydride (PTC-DA) and the final product has been purified and filtered x7 times to reach 99.997% purity. We recommend our customers to treat their substrates using Piranha solution and / or plasma treatment cleaning process to prepare surfaces for PTAS functionalization prior to CVD growth.

Partial List of Publications Using This Product

Berkeley - M. Zhao et.al. "Large-scale chemical assembly of atomically thin transistors" Nature Nanotechnology 11, 954–959 (2016)

Y. Lee et.al. "Characterization of the structural defects in CVD-grown monolayered MoS2 using near-field photoluminescence imaging" Nanoscale, 2015,7, 11909-11914 DOI: 10.1039/C5NR02897C


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