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Natural MoS2 is an indirect gap semiconductor (1.2 eV) but becomes highly lumine...

Tungsten disulfide (2H-WS2) crystals are extremely rare in nature and are less t...

Years of growth optimization lead to our flawless n-type MoS2 crystals through A...

Zirconium disulfide (ZrS?) is an indirect gap layered semiconductor in the bulk ...

More than a decade of growth optimization in chemical vapor transport (CVT) as w...

Anisotropic transition metal trichalcogenide material TiS3 is available at 2Dsem...

Anisotropic transition metal trichalcogenide material TiS3 is available at 2Dsem...

ZrSiS as a theoretically predicted and experimentally proven Dirac semimetal, ex...

Gamma layered phase of In2S3 is a direct gap semiconductor with an optical band ...

NiPSe3 is a quasi-two-dimensional antiferromagnet in the bulk form while it's ma...

14 years of growth optimization in chemical vapor transport (CVT) as well as flu...

Natural MoS2 is an indirect gap semiconductor (1.2 eV) but becomes highly lumine...

QLED量子點(diǎn) 特制紅/綠/藍(lán)QLED量子點(diǎn)溶液濃度：~20mg/ml，溶劑：正辛烷（可定制不同溶劑、濃度）直接用于旋涂工藝 ZnMgO納米粒子 濃度：~30m...

ZnSe量子點(diǎn)是一種新型環(huán)保“綠色"半導(dǎo)體納米材料，有效克服了Cd系量子點(diǎn)毒性大的缺點(diǎn)，作為寬帶隙半導(dǎo)體材料，ZnSe是制造藍(lán)綠波段半導(dǎo)體發(fā)光器件的重要材料。應(yīng)...

由于其激子波爾半徑比Ⅱ-Ⅵ族的大，量子限域效應(yīng)明顯，消光系數(shù)大，發(fā)射光譜頻率覆蓋整個可見光范圍，并延伸至近紅外區(qū)域，尤其是不含有重金屬元素，InP量子點(diǎn)在平板顯...

光學(xué)性能對粒子尺寸的依賴性是量子點(diǎn)*的和*吸引力的功能。例如，通過控制粒子的大小，CdSe量子點(diǎn)的發(fā)射光波長在整個可見光范圍內(nèi)連續(xù)可調(diào)。然而，二元素量子點(diǎn)，如C...

光學(xué)性能對粒子尺寸的依賴性是量子點(diǎn)*的和*吸引力的功能。例如，通過控制粒子的大小，CdSe量子點(diǎn)的發(fā)射光波長在整個可見光范圍內(nèi)連續(xù)可調(diào)。然而，二元素量子點(diǎn)，如C...

近紅外量子點(diǎn)具有玻爾半徑大、禁帶寬度小、能量轉(zhuǎn)換率較高等特點(diǎn)，在光電器件、通訊、發(fā)光二極管、太陽能電池等領(lǐng)域有著廣泛應(yīng)用。由于其發(fā)射的近紅外波長具有很強(qiáng)的組織穿...

轉(zhuǎn)換發(fā)光納米粒子主要是由氧化物、氟化物、鹵氧化物等基質(zhì)摻雜三價稀土離子（如Er3+ , Eu3+ , Yb3+ , Tm3+ , Ho3+ 等）得到，通過多光子...

Our TiS2 crystals are stabilized in 1T ohase (semimetallic phase). They are grow...