二硫化錫晶體 2H-SnS2（Tin Sulfide）
晶體尺寸：~8毫米
電學(xué)性能：半導(dǎo)體（~ 2.2ev）
晶體結(jié)構(gòu)：六邊形
晶胞參數(shù)：a = b = 0.364, c = 0.589 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：＞99.995%

二硫化錫晶體 2H-SnS2(Tin Sulfide)
晶體尺寸：~8毫米
電學(xué)性能：半導(dǎo)體（~ 2.2ev）
晶體結(jié)構(gòu)：六邊形
晶胞參數(shù)：a = b = 0.364, c = 0.589 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：＞99.995%

X-ray diffraction on a 2H phase Tin Disulfide single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4

 

Powder X-ray diffraction (XRD) of a single crystal 2H-SnS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

 

Stoichiometric analysis of a single crystal 2H-SnS2 by Energy-dispersive X-ray spectroscopy (EDX).

 

Raman spectrum of a single crystal 2H-SnS2. Measurement was performed with a 785 nm Raman system at room temperature.