六方氮化硼晶體（20片裝） hBN（Hexagonal Boron Nitride）-Crystal
晶體尺寸：~1mm
電學(xué)性能：絕緣體/半導(dǎo)體
晶體結(jié)構(gòu)：六邊形
晶胞參數(shù)：a = b = 0.2502 nm, c = 0.6617 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：*

六方氮化硼晶體（20片裝） hBN(Hexagonal Boron Nitride)-Crystal
晶體尺寸：~1mm
電學(xué)性能：絕緣體/半導(dǎo)體
晶體結(jié)構(gòu)：六邊形
晶胞參數(shù)：a = b = 0.2502 nm, c = 0.6617 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：*

X-ray diffraction on a hexagonal boron nitride single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3

Raman spectrum of a single crystal hexagonal boron nitride (h-BN). Measurement was performed with a 785nm Raman system at room temperature.

Device at left side: Fabrication of a high mobiltity bilayer graphene. This field effect transistor is fabricated using the polymer 2D_CL_PC ( click here ). The device is composed out of four 2D layers. The bilayer graphene is encapsulated between two hexagonal boron nitride crystals (h-BN). The fourth layer is a thin layer of graphite (HOPG) which is used as a backgate. Scale bar is 20μm. Device at right side: This device is similar to the one at the left side, here we added on the top hexagonal boron nitride layer a gold electrode in order to apply a top gate voltage to the hBN encapsulated bilayer graphene. Scale bar is 20μm